The Multiplex range of plasma systems combine a single wafer or batch vacuum loadlock with STS etch plasma sources to produce a platform of unrivalled quality and reliability for both R&D and pilot-production applications.
SYSTEM DESCRIPTION:
STS Multiplex AOE System (Advanced Oxide Etch) capable of processing up to 8inch wafers.
STS Multiplex ICP ASE System configured as follows:
Chamber Type:
ICP-AOE Version No: 2.0
Loadlock Type:
Carousel Loadlock for 200mm wafers with qty-2 150mm wafer adaptors
Process Module:
MESC Multiplex ICP HCH250M process chamber; ICP 250H Source (SiOx type); High capacity electrode temperature control (+5 to +180 deg C); Mechanical wafer clamping electrode (tripod lift - high temp) with He backside cooling; 600 Watt (13.56MHz) RF supply and matching unit; 3kW (13.56MHz) RF power supply and matching unit; Leybold MAG2000CT turbo pump; Edwards iQDP80 dry pumps; Watlow 4x 700W cartridge heaters; chamber parts for 1 x 150mm substrate (Mechanical Clamp); hinged chamber lid; chamber insulation jackets (V2 BH thermal jackets)
Electrode Cooling:
Huber Unistat T327WHT (Lower); Affinity RAA-005J-CE01CBD with 1 Meg DI water filter (Upper)
