Surface Technology Systems Multiplex range of plasma systems combine a single wafer or batch vacuum loadlock combined with STS etch plasma sources to produce a platform of unrivalled quality and reliability for both R&D and pilot-production applications. Surface Technology Systems ASE Process is the market-leading deep reactive ion etch (DRIE) process from STS plc, used for deep anisotropic silicon etching.
EQUIPMENT SPECIFICATIONS
Process Chamber Type:
MESC Multiplex ICP HC250M Process Chamber for Inductively Coupled Plasma, Advanced Silicon Etch - High Rate (ICP ASE-HR)
Vintage:
2000
Wafer Size:
Capable of handling wafers from 3 inches to 8 inches (75mm - 200mm); current wafer set size is 6 inches (150mm)
Wafer Clamping:
Electrostatic Clamp (ESC)
Turbo Type:
Leybold MAG2000CT
Dry Pump Combination:
Edwards iQMB250 / iQDP80(M)
RF Generators:
Upper: AE RFG3001 3kW (13.56MHz); Lower: ENI ACG3B 300/30W (13.56MHz); No Phase Lock
Lower Electrode Cooling:
Huber Unistat 140W chiller (50Hz: Silicon Oil: -20 to +45C)
